? 2010 ixys corporation, all rights reserved ds100229(01/10) v dss = 175v i d25 = 150a r ds(on) 12.0m t rr 160ns n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 175 c 175 v v dgr t j = 25 c to 175 c, r gs = 1m 175 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 150 a i dm t c = 25 c, pulse width limited by t jm 400 a i a t c = 25 c75a e as t c = 25 c 1.0 j dv/dt i s i dm , v dd v dss ,t j 175 c 15 v/ns p d t c = 25 c 880 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. weight to-247 6 g to-268 4 g ixfh150n17t2 IXFT150N17T2 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 175 v v gs(th) v ds = v gs , i d = 1ma 2.5 4.5 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 10 a t j = 150 c 1.5 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 9.7 12.0 m advance technical information trencht2 tm hiperfet tm power mosfet features z high current handling capability z fast intrinsic diode z dynamaic dv/dt rated z avalanche rated z low r ds(on) advantages z easy to mount z space savings z high power density applications z dc-dc converters z battery chargers z switch-mode and resonant-mode power supplies z dc choppers z ac motor drives z uninterruptible power supplies z high speed power switching applications g = gate d = drain s = source tab = drain to-268 (ixft) s g d (tab) to-247 (ixfh) g s d (tab) d
ixys reserves the right to change limits, test conditions, and dimensions. ixfh150n17t2 IXFT150N17T2 symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 100 165 s c iss 14.6 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1100 pf c rss 136 pf t d(on) 32 ns t r 16 ns t d(off) 50 ns t f 20 ns q g(on) 233 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 67 nc q gd 63 nc r thjc 0.17 c/w r thcs to-247 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 150 a i sm repetitive, pulse width limited by t jm 600 a v sd i f = 100a, v gs = 0v, note 1 1.3 v t rr 160 ns i rm 7.80 a q rm 0.34 c ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. i f = 75a, -di/dt = 100a/ s v r = 75v, v gs = 0v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 (external) advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. e ? p to-247 (ixfh) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-268 (ixft) outline terminals: 1 - gate 2 - drain 3 - source
? 2010 ixys corporation, all rights reserved fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v ds - volts i d - amperes v gs = 10v 8v 7v 5v 4v 6v fig. 3. output characteristics @ t j = 150oc 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v ds - volts i d - amperes v gs = 10v 7v 5 v 4 v 6v fig. 4. r ds(on) normalized to i d = 75a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 75a i d = 150a fig. 5. r ds(on) normalized to i d = 75a value vs. drain current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 50 100 150 200 250 300 i d - amperes r ds(on) - normalized v gs = 10v t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 160 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 012345678910 v ds - volts i d - amperes v gs = 10v 8v 7v 5v 6v ixfh150n17t2 IXFT150N17T2
ixys reserves the right to change limits, test conditions, and dimensions. ixfh150n17t2 IXFT150N17T2 fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 200 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 50 100 150 200 250 300 0 20 40 60 80 100 120 140 160 180 200 220 i d - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 220 240 q g - nanocoulombs v gs - volts v ds = 85v i d = 75a i g = 10ma fig. 11. capacitance 0.1 1 10 100 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - nanofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0 1 10 100 1,000 1 10 100 1,000 v ds - volts i d - amperes 100s 1ms 10ms r ds(on) limit t j = 175oc t c = 25oc single pulse dc 25s
? 2010 ixys corporation, all rights reserved fig. 14. resistive turn-on rise time vs. drain current 14 15 16 17 18 19 20 21 22 23 24 30 40 50 60 70 80 90 100 110 120 130 140 150 i d - amperes t r - nanoseconds t j = 25oc t j = 125oc r g = 1 ? , v gs = 10v v ds = 85v fig. 15. resistive turn-on switching times vs. gate resistance 0 50 100 150 200 250 300 350 400 450 500 12345678910 r g - ohms t r - nanoseconds 30 35 40 45 50 55 60 65 70 75 80 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 85v i d = 75a i d = 150a fig. 16. resistive turn-off switching times vs. junction temperature 6 10 14 18 22 26 30 34 38 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 35 40 45 50 55 60 65 70 75 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 10v v ds = 85v i d = 150a, 75a fig. 17. resistive turn-off switching times vs. drain current 15 16 17 18 19 20 21 22 30 40 50 60 70 80 90 100 110 120 130 140 150 i d - amperes t f - nanoseconds 40 45 50 55 60 65 70 75 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 10v v ds = 85v t j = 25oc, 125oc fig. 13. resistive turn-on rise time vs. junction temperature 14 15 16 17 18 19 20 21 22 23 24 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v gs = 10v v ds = 85v i d = 150a i d = 75a fig. 18. resistive turn-off switching times vs. gate resistance 0 100 200 300 400 500 600 12345678910 r g - ohms t f - nanoseconds 0 50 100 150 200 250 300 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 85v i d = 150a i d = 75a ixfh150n17t2 IXFT150N17T2
ixys reserves the right to change limits, test conditions, and dimensions. ixfh150n17t2 IXFT150N17T2 fig. 19. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w ixys ref:f_150n17t2(7v)1-14-10
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